The national "973" and "863" undertaken by the Institute of Semiconductors of the Chinese Academy of Sciences and the "new generation of gallium indium arsenide (GaInNAs) long-wavelength optoelectronic materials and devices" of the Chinese Academy of Sciences have successfully developed gallium indium nitrogen with a working wavelength of 1.58 microns. The arsenic/gallium-arsenide long-wavelength (GaInNAsSb/GaAs) single quantum well edge-emitting laser achieves room temperature continuous lasing, and its performance parameters such as threshold current reach the level of gallium arsenide (GaAs) based 1.2 to 1.6 micron band, surpassing international standards. The results of a 1.5 micron study.
Based on molecular beam epitaxy to grow high-quality 1.3 micron quantum well materials, the researchers extended the quantum wavelength of the quantum well to 1.55 micrometers by increasing the amount of nitrogen incorporated and using gallium arsenide (GaN) barrier layers. At the same time, the use of strontium as a surfactant in the growth process optimizes the annealing conditions, greatly improves the crystal quality, and makes the material quality meet the requirements of laser fabrication.
The successfully developed laser uses a ridge waveguide strip structure to achieve a continuous lasing of 1.58 microns at room temperature. This is the world's first room temperature lasing of a gallium arsenide (GaAs) based dilute compound semiconductor laser of 1.5 microns or more. It demonstrates the feasibility of a full application of gallium arsenide (GaAs) based devices in the 1.2 to 1.6 micron band. In order to further realize the practical and industrialization of applications in optical communication and optical interconnection, it has shown bright prospects.
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